Keywords: Atom, Physics, Master level Internship Duration: 30/11/-1 - 30/11/-1
Head of the hosting team: Hocine Khemliche
Address of the host laboratory: ISMO (Institut des Sciences Moleculaires d'Orsay) Team Hocine Khemliche's team Bât. 520, Université Paris-Saclay, Orsay 91400 Orsay France
Supervisor: Hocine KhemlicheE-mail: hocine.khemliche@universite-paris-saclay.fr Phone: 33 (0)1 69 15 75 49
This project is part of a collaboration between the ISMO and the LPGP (Laboratoire de Physique des Gaz et des Plasmas, Paris-Saclay University) and benefits from the support of CNRS through the Prematuration program. This internship may be extended to a PhD project (EDOM doctoral school).
n the form of ultrathin layers, materials can show interesting properties that are different from those of the bulk. Beyond the potential applications enabled by these properties, describing and understanding the mechanisms of formation of these ultrathin layers and their impact on the properties (structural, electronic, optical, etc.) represents a fundamental challenge. To achieve this goal, it is essential to be able to monitor the growth process in real time and to describe its key parameters (growth rate and mode, morphology and crystalline structure, strain level) with high sensitivity.
“Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process”; https://doi.org/10.1038/s41598-017-01755-8 - https://www.cnrs.fr/cnrsinnovation-lalettre/actus.php?numero=220 - “Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs”; https://doi.org/10.1063/1.4890121 - "Grazing incidence fast atom diffraction in high-pressure conditions"; https://doi.org/10.1016/j.surfin.2023.102754 - Patent “Device for analyzing surfaces using Fast Atom Diffraction in a high-pressure environment”, EP4099005A1, 2022
